Liquid crystal display and method of manufacturing the same

ABSTRACT

A liquid crystal display includes a first substrate, a gate line and first and second data lines disposed on the first substrate, a first thin film transistor connected to the gate line and the first data line, a second thin film transistor connected to the gate line and the second data line, a color filter disposed on the first substrate, a protrusion disposed on the color filter, a first pixel electrode including a first linear electrode disposed on the protrusion and connected to the first thin film transistor, a second pixel electrode including a second linear electrode disposed on the protrusion and connected to the second thin film transistor, a second substrate disposed facing the first substrate, and blue phase liquid crystal disposed between the first substrate and the second substrate.

This application is a divisional application of U.S. application Ser.No. 12/499,325 filed on Jul. 8, 2009, which claims priority to KoreanPatent Application No. 10-2008-0085112 filed in the Korean IntellectualProperty Office on Aug. 29, 2008, and all the benefits accruingtherefrom under 35 U.S.C. §119, the entire contents of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

(a) Field of the Invention

The present invention relates to a display device. More particularly,the present invention relates to a display device using blue phaseliquid crystal.

(b) Description of the Related Art

A liquid crystal display is one type of flat panel display that iswidely used. The liquid crystal display includes two display panels inwhich a field generating electrode, such as a pixel electrode, and acommon electrode is formed, and a liquid crystal layer interposedtherebetween. The liquid crystal display generates an electric field ina liquid crystal layer by applying a voltage to a field generatingelectrode, thereby determining alignment of liquid crystal molecules ofthe liquid crystal layer and displaying images by controllingpolarization of incident light.

In the liquid crystal display, because a transmittance of light isdetermined by an alignment state of a liquid crystal layer, in order toquickly change the alignment state, a relatively fast response speed ofthe liquid crystal layer is required.

A liquid crystal display using blue phase liquid crystal, in which astate of the liquid crystal exists between a nematic mode and anisotropic mode, has been developed. The blue phase liquid crystal has arelatively very fast response speed of about 3 micrometers (μm).

BRIEF SUMMARY OF THE INVENTION

When a liquid crystal display includes a liquid crystal display usingblue phase liquid crystal, in which a state of the liquid crystal existsbetween a nematic mode and an isotropic mode, there may be challenges inoperating and manufacturing the liquid crystal display. For example,there may be a problem where a required driving voltage of the liquidcrystal is relatively very high, and light leakage occurs between theelectrodes.

An exemplary embodiment of the present invention provides a liquidcrystal display having advantages of improving picture quality byreducing a level of a driving voltage, and reducing or effectivelyblocking light leakage between the electrodes.

An exemplary embodiment of the present invention provides a liquidcrystal display including a first substrate; a gate line disposed on thefirst substrate and extending in a first direction, first and seconddata lines extending in a second direction and isolated from andintersecting the gate line, a first thin film transistor connected tothe gate line and the first data line, a second thin film transistorconnected to the gate line and the second data line, a passivation layercovering the first and second thin film transistors, a black matrixdisposed on the passivation layer and disposed in a region correspondingto the gate line, the first and second data lines, and the first andsecond thin film transistors, a color filter disposed on the passivationlayer and positioned at a region where the black matrix is not disposed,a protrusion disposed on the color filter, a first pixel electrodeincluding a first linear electrode disposed on the protrusion andconnected to the first thin film transistor, a second pixel electrodeincluding a second linear electrode disposed on the protrusion andconnected to the second thin film transistor, a second substratedisposed opposite to the first substrate, and blue phase liquid crystaldisposed between the first substrate and the second substrate. Light isnot transmitted through the first linear electrode and the protrusion,and light is not transmitted through the second linear electrode and theprotrusion.

The protrusion may be made of the same material as that of the blackmatrix.

The first pixel electrode including the first linear protrusion, and thesecond pixel electrode including the second linear protrusion may beformed with an opaque conductor.

The liquid crystal display may further include a capping layer coveringthe black matrix and the color filter.

An opaque metal layer may be disposed under the protrusion and on thecolor filter.

The liquid crystal display may further include a capping layer coveringthe black matrix and the color filter, and disposed under the opaquemetal layer.

The protrusion may have a cross-section of a bell shape, or one of asemicircular cross-section, a semi-oval cross-section, a triangularcross-section, and a trapezoidal cross-section.

A side surface of the protrusion may have a taper form.

Before an electric field is applied, the blue phase liquid crystal mayhave optically isotropic characteristics because disordered domains arearranged in a nano size, and when an electric field is applied, the bluephase liquid crystal may have optically anisotropic characteristicsbecause liquid crystals are arranged in an electric field direction.

The first pixel electrode and the second pixel electrode may beelectrically connected to the first thin film transistor and the secondthin film transistor through first and second contact holes,respectively. The first contact hole may be formed in the color filterand the passivation layer and expose a drain electrode of the first thinfilm transistor. The second contact hole may be formed in the colorfilter and the passivation layer and expose a drain electrode of thesecond thin film transistor.

When a data voltage is applied to the first pixel electrode, a commonvoltage may be applied to the second pixel electrode.

When a data voltage is applied to the first pixel electrode, a voltagehaving polarity opposite to that of the data voltage and of a samemagnitude as the data voltage may be applied to the second pixelelectrode.

The protrusion and the first and second linear electrodes may beobliquely disposed relative to the gate line and the first and seconddata lines.

The protrusion and the first and second linear electrodes may bedisposed in an angle of about 45° relative to the gate line.

A first polarizer and a second polarizer may be attached to an outsideof the first substrate and the second substrate, respectively. The firstpolarizer and the second polarizer may have a transmissive axis, and thetransmissive axis of the first polarizer and the transmissive axis ofthe second polarizer may have an angle of about 45° relative to thefirst linear electrode or the second linear electrode.

The liquid crystal display may further include a storage electrode linein parallel to the gate line and including a storage electrode.

The first pixel electrode may include a trunk portion, and a surfaceelectrode corresponding to the first linear electrode and the storageelectrode, and the first linear electrode may extend from the trunkportion and the surface electrode.

The second pixel electrode may include an inverse

-shaped trunk portion and the second linear electrode, and the secondlinear electrode may extend from the inverse

-shaped trunk portion.

An exemplary embodiment of the present invention provides a liquidcrystal display including, a first substrate, a gate line disposed onthe first substrate and extending in a first direction, first and seconddata lines extending in a second direction and electrically insulatedfrom and intersecting the gate line, a first thin film transistorconnected to the gate line and the first data line, a second thin filmtransistor connected to the gate line and the second data line, apassivation layer covering the first and second thin film transistors, ablack matrix disposed on the passivation layer and disposed in a regioncorresponding to the gate line, the first and second data lines, and thefirst and second thin film transistors, a color filter disposed on thepassivation layer and positioned at a region where the black matrix isnot disposed, a protrusion disposed formed on the color filter andincludes an organic film, a first pixel electrode including a firstlinear electrode disposed on the protrusion and connected to the firstthin film transistor, a second pixel electrode including a second linearelectrode disposed on the protrusion and connected to the second thinfilm transistor, a second substrate disposed opposite to the firstsubstrate, and blue phase liquid crystal disposed between the firstsubstrate and the second substrate. A refractive index in a specificstate of the blue phase liquid crystal is the same as a refractive indexof the protrusion.

A refractive index of the blue phase liquid crystal when the liquidcrystal display displays black may be the same as a refractive index ofthe protrusion.

An exemplary embodiment of the present invention provides a method ofmanufacturing a display device. The method includes forming an organicfilm pattern by stacking and patterning an organic material on aninsulation substrate, stacking a first layer on the organic film patternand the insulation substrate, exposing the organic film and the firstlayer from a rear surface of the insulation substrate with ultravioletrays using the organic film pattern as a mask, and patterning the firstlayer.

The organic film pattern may be hard-baked or a surface treatment of theorganic film pattern may be performed.

The surface treatment may be performed with one of N-methylpyrrolidone(NMP), which is a strong alkali organic solvent, metyl n-butyl ketone(MBK), which is an organic solvent for a resin, and acetone.

The first layer may have photosensitivity.

The method may further include stacking a photoresist on the firstlayer, and patterning the photoresist by developing after exposing therear surface. The patterning of the first layer may include etching thefirst layer using the patterned photoresist as a mask.

An exemplary embodiment of a liquid crystal display according to thepresent invention has advantages of a driving voltage is reduced, andpicture quality is improved by blocking light leakage betweenelectrodes.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a graph illustrating an exemplary embodiment of a mixed ratioand a temperature of blue phase liquid crystal, according to the presentinvention.

FIG. 2 is a layout view of an exemplary embodiment of a liquid crystaldisplay, according to the present invention.

FIG. 3 is a cross-sectional view of the liquid crystal display takenalong line III-III of FIG. 2.

FIGS. 4, 6, 8, 10, 12, and 14 are layout views in an intermediate stepof an exemplary embodiment of a method of manufacturing a thin filmtransistor array panel of the liquid crystal display of FIGS. 2 and 3,according to the present invention.

FIG. 5 is a cross-sectional view illustrating the thin film transistorarray panel taken along line V-V of FIG. 4.

FIG. 7 is a cross-sectional view illustrating the thin film transistorarray panel taken along line VII-VII of FIG. 6.

FIG. 9 is a cross-sectional view illustrating the thin film transistorarray panel taken along line IX-IX of FIG. 8.

FIG. 11 is a cross-sectional view illustrating the thin film transistorarray panel taken along line XI-XI of FIG. 10.

FIG. 13 is a cross-sectional view illustrating the thin film transistorarray panel taken along line XIII-XIII of FIG. 12.

FIG. 15 is a cross-sectional view illustrating the thin film transistorarray panel taken along line XV-XV of FIG. 14.

FIG. 16 is a cross-sectional view of another exemplary embodiment of theliquid crystal display taken along line III-III of FIG. 2, according tothe present invention.

FIGS. 17 to 19 are cross-sectional views illustrating an exemplaryembodiment of a process of manufacturing a thin film transistor arraypanel.

FIG. 20 is a cross-sectional view of another exemplary embodiment of theliquid crystal display taken along line III-III of FIG. 2, according tothe present invention.

FIGS. 21 to 24 are cross-sectional views illustrating an exemplaryembodiment of a process of manufacturing a thin film transistor arraypanel.

FIG. 25 is a cross-sectional view of another exemplary embodiment of theliquid crystal display taken along line III-III of FIG. 2, according tothe present invention.

FIGS. 26 to 31 are cross-sectional views illustrated an exemplaryembodiment of a process of forming a pixel electrode on a protrusion,using a protrusion including an organic material as a mask.

FIGS. 32 and 33 are graphs illustrating a transmittance to a wavelengthof an organic material.

FIGS. 34 to 41 are cross-sectional views illustrating an exemplaryembodiment of a method of manufacturing a thin film transistor arraypanel of FIGS. 22 to 24.

FIG. 42 is a cross-sectional view of another exemplary embodiment of theliquid crystal display taken along line III-III of FIG. 2, according tothe present invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention will be described more fully hereinafter withreference to the accompanying drawings, in which exemplary embodimentsof the invention are shown. The present invention is not limited to theexemplary embodiments, but may be embodied in various forms. In thedrawings, the thickness of layers, films, panels, regions, etc., areexaggerated for clarity. Like reference numerals designate like elementsthroughout the specification. As used herein, the term “and/or” includesany and all combinations of one or more of the associated listed items.

It will be understood that when an element such as a layer, film,region, or substrate is referred to as being “on” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” another element, there are no intervening elements present.

It will be understood that, although the terms first, second, third,etc., may be used herein to describe various elements, components,regions, layers and/or sections, these elements, components, regions,layers and/or sections should not be limited by these terms. These termsare only used to distinguish one element, component, region, layer orsection from another region, layer or section. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of the present invention.

Spatially relative terms, such as “lower”, “under,” “above”, “upper” andthe like, may be used herein for ease of description to describe therelationship of one element or feature to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation, in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath”relative to other elements or features would then be oriented “above”relative to the other elements or features. Thus, the exemplary term“below” can encompass both an orientation of above and below. The devicemay be otherwise oriented (rotated 90 degrees or at other orientations)and the spatially relative descriptors used herein interpretedaccordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

Embodiments of the invention are described herein with reference tocross-section illustrations that are schematic illustrations ofidealized embodiments (and intermediate structures) of the invention. Assuch, variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, embodiments of the invention should not be construed aslimited to the particular shapes of regions illustrated herein but areto include deviations in shapes that result, for example, frommanufacturing.

For example, an implanted region illustrated as a rectangle will,typically, have rounded or curved features and/or a gradient of implantconcentration at its edges rather than a binary change from implanted tonon-implanted region. Likewise, a buried region formed by implantationmay result in some implantation in the region between the buried regionand the surface through which the implantation takes place. Thus, theregions illustrated in the figures are schematic in nature and theirshapes are not intended to illustrate the actual shape of a region of adevice and are not intended to limit the scope of the invention.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

All methods described herein can be performed in a suitable order unlessotherwise indicated herein or otherwise clearly contradicted by context.The use of any and all examples, or exemplary language (e.g., “suchas”), is intended merely to better illustrate the invention and does notpose a limitation on the scope of the invention unless otherwiseclaimed. No language in the specification should be construed asindicating any non-claimed element as essential to the practice of theinvention as used herein.

Hereinafter, the present invention will be described in detail withreference to the accompanying drawings.

Blue phase liquid crystal is described hereinafter with reference toFIG. 1.

FIG. 1 is a graph illustrating an exemplary embodiment of a mixed ratioand a temperature of blue phase liquid crystal according to the presentinvention.

The horizontal axis of FIG. 1 represents a mixed ratio of a material,and the vertical axis thereof represents a Kelvin temperature (K). In anexemplary embodiment of the present invention, as an addition materialof liquid crystal, ethyl hexyl acrylate (EHA) and RM257 (a product name)are used.

When a material having chirality as a dopant is added to liquid crystal,the liquid crystal is changed to a nematic mode or an isotropic modeaccording to a temperature, and has a blue phase mode in a relativelynarrow temperature range between the nematic mode and the isotropicmode. Because the blue phase mode has a narrow temperature range, it maybe difficult to use the blue phase mode for a liquid crystal display.Accordingly, by adding a small quantity of a monomer to the liquidcrystal, and then radiating UVfmf to the liquid crystal, blue phaseliquid crystal is stabilized through polymerization. Thereafter, aliquid crystal display is manufactured using stabilized blue phaseliquid crystal.

FIG. 1 shows a case where EHA and RM257 are used as a monomer. In FIG.1, a region where “N*” is displayed has a nematic mode, a region where“Iso” is displayed has an isotropic mode, and a region where “BP” isdisplayed has a blue phase. A region A represents a region having a bluephase exists only in a relatively narrow temperature range. If a liquidcrystal display is manufactured using materials from the region A,according to a use environment (particularly, a temperature) of theliquid crystal display, images may not be displayable, so that bluephase liquid crystal cannot be used for the liquid crystal display.However, when EHA and RM257 are added with a ratio of 6:4 to 8:2 and UVis radiated and stabilized (a case BP), blue phase liquid crystal existsin a relatively wide temperature range, and (stabilized) blue phaseliquid crystal can be advantageously used as liquid crystal for theliquid crystal display.

In blue phase liquid crystal, because liquid crystals having an opticalanisotropy are disorderedly arranged, the entire blue phase liquidcrystals have characteristics of isotropy. If an electric field isapplied to blue phase liquid crystal, liquid crystals arranged in thecorresponding electric field direction increase and have anisotropiccharacteristics. Further, because a domain formed by each liquid crystalhas a nano size, liquid crystals have negligible or effectively noinfluence on each other.

Due to characteristics of blue phase liquid crystal, exemplaryembodiments of a liquid crystal display according to the presentinvention has the following advantageous characteristics.

An alignment layer disposed at the inside of the substrate is notrequired. Since blue phase liquid crystals are disorderedly arranged,but before an electric field is applied, blue phase liquid crystal has aproperty of isotropy, it is unnecessary to form an alignment layer.

Another characteristic of a liquid crystal display using blue phaseliquid crystal, is that a cell gap of a liquid crystal layer is notcritical to a display device. For example, it is necessary to form bluephase liquid crystal only in a minimal predetermined thickness or more,and even if a liquid crystal layer including the blue phase liquidcrystal is relatively thickly formed, characteristics thereof do notchange. Advantageously, it is unnecessary to manufacture a displaydevice in consideration of a thickness of the liquid crystal layer.

Another advantageous characteristic of a liquid crystal display usingblue phase liquid crystal, is that even when the liquid crystal displayincluding the blue phase liquid crystal is pressed manually (e.g., by ahand), a bruising phenomenon in which a color sense of images changes,does not occur.

Because liquid crystal has isotropy in essentially all directions, it isunnecessary that the liquid crystal display uses a compensation film.

Exemplary embodiments of a structure of a liquid crystal display usingthe stabilized blue phase liquid crystal is described in detail withreference to the drawings.

FIG. 2 is a layout view of an exemplary embodiment of a liquid crystaldisplay according to the present invention, and FIG. 3 is across-sectional view of the liquid crystal display taken along lineIII-III of FIG. 2.

First, a lower thin film transistor array panel is described.

Gate wires 121, 124, and 124-1 and a storage capacitance line 131 aredisposed on a transparent insulation substrate 110. The transparentinsulation substrate may include glass, and so on.

The gate wires 121 and 124 include a gate line 121 extendingsubstantially in a first (horizontal) direction in the layout view. Aportion of the gate line 121 protrudes upwards in a second (vertical)direction in the layout view, to form gate electrodes 124 and 124-1. Asshown in FIG. 2, a plurality of the gate electrode, e.g., two gateelectrodes 124 and 124-1, are disposed in each of a pixel area.

The storage capacitance line 131 is disposed substantially in parallelto the gate line 121. The storage capacitance line 131 may include aportion having a relatively wider first width within the pixel area thana second width of the storage capacitance line 131 disposed overlappingboundaries of the pixel area. The portion of the storage capacitanceline 132 having the (wider) first width forms a storage electrode 134.The first and the second widths are taken in the second direction,substantially perpendicular to the first direction.

The gate wires 121, 124, and 124-1, and the storage capacitance line 131are covered with a gate insulating layer 140. The gate insulating layer140 may be disposed on and overlap an entire of the transparentsubstrate 110, and may directly contact the gate wires 121, 124, and124-1, and the storage capacitance line 131. Semiconductor layers 154and 154-1, which may include amorphous silicon, are disposed on portionsof the gate insulating layer 140. The semiconductor layers 154 and 154-1are overlapped with the gate electrodes 124 and 124-1, and form achannel of a thin film transistor. Ohmic contact layers 163, 165, 163-1,and 165-1, which may include amorphous silicon in which N-type impuritysuch as phosphorous is doped with a high concentration, are disposed onthe semiconductor layers 154 and 154-1. The ohmic contact layers 163 and165, and the ohmic contact layers 163-1 and 165-1, are separated fromeach other to define the channel of the thin film transistor.

Data wires 171, 173, 175, 171-1, 173-1, and 175-1 are disposed on theohmic contact layers 163, 165, 163-1, and 165-1 and the gate insulatinglayer 140. The data wires 171, 173, 175, 171-1, 173-1, and 175-1 includetwo data lines 171 and 171-1 extending substantially in the verticaldirection, source electrodes 173 and 173-1 respectively connectedthereto, and drain electrodes 175 and 175-1 respectively separatedtherefrom. The source electrodes 173 and 173-1 and the drain electrodes175 and 175-1 are respectively separated from each other, furtherdefining the channel of the thin film transistor. The source electrodes173 and 173-1 respectively protrude upwards in the vertical direction inthe layout view from the data lines 171 and 171-1 in an upper part ofthe gate electrodes 124 and 124-1, and have substantially a “U” shape,or a horse's hoof shape. The drain electrodes 175 and 175-1 arerespectively disposed opposite to the source electrodes 173 and 173-1relative to the channel of the thin film transistor, and a first(distal) end thereof is positioned within a “U” shape, or a horse's hoofshape of the source electrodes 173 and 173-1, while a second end thereofis extended and has a relatively wide width taken in the first and/orsecond directions.

The ohmic contact layers 163, 165, 163-1, and 165-1 are disposed only ina region where the semiconductor layers 154 and 154-1 and the data wires171, 173, 175, 171-1, 173-1, and 175-1 overlap. The gate electrode 124,the semiconductor layer 154, the source electrode 173, and the drainelectrode 175 define a single e.g., one) first transistor, and the gateelectrode 124-1, the semiconductor layer 154-1, the source electrode173-1, and the drain electrode 175-1, which are symmetrically disposedthereto, define a single second transistor.

A passivation layer 180 is disposed on the data wires 171, 173, 175,171-1, 173-1, and 175-1. A color filter 230 and a black matrix 220 areboth disposed on the transparent substrate 110, and directly on andcontacting portions of the passivation layer 180. The black matrix 220may be disposed directly on an uppermost surface of the transistor, thegate line 121, and the data lines 171 and 171-1. The color filter 230 isdisposed in a region where the black matrix 220 is not disposed (e.g.,except for the black matrix 220). A portion of the color filter 230 maydirectly contact the drain electrode 175 and 175-1, as shown in FIG. 3.

Openings 185, 185-1, 187 and 187-1 are disposed in an upper part of thedrain electrodes 175 and 175-1 and an upper part of the storageelectrode 134. The openings 185 and 185-1 are disposed to extendcompletely through the passivation layer 180 and the color filter 230,and expose an upper surface of the drain electrodes 175 and 175-1respectively. In contrast, the openings 187 and 187-1 are formed toextend only completely through the color filter 230, while not beingformed to extend into the passivation layer 180. Referring to FIG. 2, aleftmost boundary of the opening 187, and a rightmost boundary of theopening 187-1 are disposed at a distance away from longitudinal edgesextending in a longitudinal direction (e.g., second direction) of thecolor filter 230. The openings 187 and 187-1 are spaced away from eachother in a transverse direction (e.g., first direction) within the colorfilter 230. A portion of the color filter 230 is disposed between theopenings 187 and 187-1, at substantially a center of the color filter230, and extends substantially in the second direction.

A plurality of a protrusion 225 is disposed directly on an upper surfaceof the color filter 230. In the illustrated exemplary embodiment, theprotrusion 225 has a substantially bell-shaped section, but may havevarious cross-section shapes such as a semicircular shape, a semi-ovalshape, a triangular shape, and a trapezoidal shape in alternativeembodiments. It is preferable that a side surface of the protrusion 225has a taper shape, such that a width of the protrusion 225 increasesfrom a distal end of the protrusion 225 towards the color filter 230.The width of the protrusion 225 may be taken substantially in the firstand/or second directions. In an exemplary embodiment, the protrusion 225may include a same material as that of the black matrix 220, and may beconfigured to not transmit (e.g., block) light incident thereon.

A first pixel electrode 190 and a second pixel electrode 190-1 aredisposed directly on the protrusions 225. The first pixel electrode 190and the second pixel electrode 190-1 are electrically connected to thedrain electrodes 175 and 175-1 through the openings 185 and 185-1,respectively. The first and second pixel electrodes 190 and 190-1 mayinclude a transparent conductor such as ITO or IZO. The first and secondpixel electrodes 190 and 190-1 may respectively include a plurality of afirst linear electrode 191 and a plurality of a second linear electrode191-1, each extending in an oblique direction relative to the gate line121 and the data lines 171 and 171-1. Both the first linear electrode191 and the second linear electrode 191-1 of the first pixel electrode190 and the second pixel electrode 190-1, are disposed directly on andoverlapping the protrusions 225. The first linear electrodes 191 and thesecond linear electrodes 191-1 may completely overlap surfaces of theprotrusions 225 not facing the color filter 230. A lower surface of thefirst and second pixel electrodes 190 and 190-1, of the first and secondlinear electrodes 191 and 191-1 may directly contact an upper surface ofthe color filter 230.

A structure of the first pixel electrode 190 is described as follows.

The first pixel electrode 190 includes a first trunk portion disposedalong the first data line 171, and a surface electrode 194. A boundaryof the first trunk portion of the first pixel electrode 190 extendssubstantially parallel to the data line 171, and is spaced apart fromthe data line 171. The surface electrode 194 substantially correspondsto the storage electrode 134, and is overlaps a portion of the storageelectrode 134. The first linear electrode 191 extends in an obliquedirection from the first trunk portion and the surface electrode 194.Referring to FIG. 2, the first linear electrode 191 extends in a rightupper direction from an upper edge of the surface electrode 194, and thefirst linear electrode 191 extends in a right lower direction from alower edge of the surface electrode 194. In an exemplary embodiment, thefirst linear electrode 191 is disposed in an angle of about 45° relativeto the gate line 121 or the data lines 171 and 171-1.

The second pixel electrode 190-1 includes an upper portion and a lowerportion both substantially in parallel to the gate line 121, and a sideportion disposed along the second data line 171-1, which may beconsidered a second trunk portion of an inverse

-shaped structure. The second linear electrode 191-1 extends from thesecond trunk portion of an inverse

-shaped structure. The second linear electrode 191-1 extends in a leftlower direction relative to the upper edge of the surface electrode 194,and the second linear electrode 191-1 extends in a left upper directionrelative to the lower edge of the surface electrode 194.

Each of the first linear electrodes 191 and each of the second linearelectrodes 191-1 are disposed directly on a protrusion 225, and aredisposed substantially in parallel to each other. Different voltages areapplied to the first linear electrodes 191 and the second linearelectrodes 191-1. In an exemplary embodiment, a common voltage isapplied to one side thereof, and a data voltage is applied to the otherside thereof. Alternatively, a data voltage may be applied to one sidethereof, and a data voltage having opposite polarity may be applied tothe other side thereof.

In the illustrated embodiment, a separate member of the liquid crystaldisplay is not disposed on a transparent substrate 210 of an upper panelfacing the thin film transistor panel. The black matrix 220, the colorfilter 230, etc., are disposed on the (lower) thin film transistor arraypanel.

Polarizers 12 and 22 are attached to an outermost surface of thetransparent substrate 110 of the thin film transistor display panel, andan outermost surface of the transparent substrate 210 of the upperpanel, respectively. In an exemplary embodiment, absorption axes of thepolarizers 12 and 22 are disposed substantially perpendicular to eachother, and/or may have an angle of about 45° relative to the firstlinear electrode 191 and the second linear electrode 191-1.

In the illustrated embodiment, an alignment layer is advantageously notdisposed at the innermost surface of the thin film transistor arraypanel and of the upper panel. A liquid crystal 3 is disposed, such as byinjection, between the upper panel and the lower panel. The liquidcrystal layer 3 is blue phase liquid crystal.

An exemplary embodiment of a method of manufacturing a thin filmtransistor array panel in the liquid crystal display shown in FIGS. 2and 3, is described in detail with reference to FIGS. 4 to 15.

FIGS. 4, 6, 8, 10, 12, and 14 are layout views of an exemplaryembodiment of an intermediate step of a method of manufacturing a thinfilm transistor array panel of the liquid crystal display of FIGS. 2 and3 according to the present invention, FIG. 5 is a cross-sectional viewillustrating the thin film transistor array panel taken along line V-Vof FIG. 4, FIG. 7 is a cross-sectional view illustrating the thin filmtransistor array panel taken along line VII-VII of FIG. 6, FIG. 9 is across-sectional view illustrating the thin film transistor array paneltaken along line IX-IX of FIG. 8, FIG. 11 is a cross-sectional viewillustrating the thin film transistor array panel taken along line XI-XIof FIG. 10, FIG. 13 is a cross-sectional view illustrating the thin filmtransistor array panel taken along line XIII-XIII of FIG. 12, and FIG.15 is a cross-sectional view illustrating the thin film transistor arraypanel taken along line XV-XV of FIG. 14.

As shown in FIGS. 4 and 5, a plurality of each of gate wires 121, 124,and 124-1, and the storage capacitance line 131 are disposed on thetransparent substrate 110.

The gate line 121 includes two gate electrodes 124 and 124-1 in eachpixel area, and the storage capacitance line 131 includes a storageelectrode 134 having a relatively wide width within a pixel area.

As shown in FIGS. 6 and 7, by sequentially and substantiallycontinuously stacking three-layered films of a gate insulating layer140, an intrinsic amorphous silicon layer, and an impurity amorphoussilicon layer, and by performing a photolithography process on theimpurity amorphous silicon layer and the intrinsic amorphous siliconlayer, semiconductor layers 154 and 154-1 are formed. In an exemplaryembodiment, the impurity amorphous silicon layer is etched with the sameform (e.g., profile) as that of the semiconductor layers 154 and 154-1.

As shown in FIGS. 8 and 9, data wires 171, 173, 175, 171-1, 173-1, and175-1 are formed. The source electrodes 173 and 173-1 respectivelyprotrude from the data lines 171 and 171-1 from an upper part of thegate electrodes 124 and 124-1, and have a substantially “U” shape, or ahorse's hoof shape. Further, the drain electrodes 175 and 175-1 aredisposed opposite to the source electrodes 173 and 173-1. A first(distal) end of the drain electrodes 175 and 175-1 is positioned at theinside of the “U” shape, or the horse's hoof shape, of the sourceelectrodes 173 and 173-1. At a second end of the drain electrodes 175and 175-1 extends to have a substantially wide width where the opening185 and 185-1 is respectively disposed.

As shown in FIGS. 10 and 11, a passivation layer 180 disposed coveringthe data wires 171, 173, 175, 171-1, 173-1, and 175-1 is formed. A colorfilter 230 is formed on the passivation layer 180, and openings 185,185-1, 187 and 187-1 are formed, such as by etching the color filter230.

As shown in FIGS. 12 and 13, a black matrix 220 and a plurality of aprotrusion 225 are formed. In an exemplary embodiment, it is preferablethat the black matrix 220 and the protrusions 225 include the samematerial, and are formed by performing a photolithography process onetime, e.g., substantially a same time. As a material for forming theblack matrix 220, a black color organic material can be used. Howeverwhen the black color organic material is used, the protrusion 225 maynot be formed at a sufficient height, taken in a direction substantiallyperpendicular to the transparent substrate 110. In one exemplaryembodiment, by adding a black color material, such as carbon black, theblack matrix 220 and the protrusion 225 can be formed together, atsubstantially a same time.

As shown in FIGS. 14 and 15, pixel electrodes 190 and 190-1 are formed,such as including a transparent conductor. The first pixel electrode 190includes a trunk portion, a surface electrode 194, and a first linearelectrode 191, and the second pixel electrode 190-1 includes an inverse

-shaped trunk portion and a second linear electrode 191-1. The firstlinear electrode 191 and the second linear electrode 191-1 are formeddirectly on and overlapping the protrusions 225, and are formedsubstantially in parallel to each other, respectively. In theillustrated embodiment, the first linear electrode 191 and the secondlinear electrode 191-1 may be disposed obliquely at an angle of about45° relative to the gate line 121 and the data lines 171 and 171-1. Inan alternative embodiment, the linear electrodes 191 and 191-1 may bepatterned through exposure of a rear surface of the lower panel usingthe protrusions 225 as a mask.

A liquid crystal display having the above described structure and usingblue phase liquid crystal, has an electrode structure of a protrusionform. Even if a relatively lower voltage is applied, liquid crystals ofa relatively large region can be influenced by the lower voltage, andthe liquid crystal display can be advantageously driven using therelatively low voltage. Further, if a voltage applied to the first dataline 171 and a voltage applied to the second data line 171-1 have anopposite phase, the liquid crystal display can be driven even in a lowervoltage.

Additionally, since the first linear electrode 191 and the second linearelectrode 191-1 are formed on a protrusion including a material of ablack matrix, leakage of light from a periphery of the protrusion isreduced or effectively prevented. Advantageously, picture quality isimproved.

A liquid crystal display according to another exemplary embodiment ofthe present invention is shown in FIGS. 16 to 19 is describedhereinafter.

FIGS. 16 to 19 show only cross-sectional views, and a layout viewthereof is the same as that of the illustrated embodiment of FIG. 2, andthus further description of the layout view is omitted. Unlike anexemplary embodiment of FIGS. 2 to 15, in FIGS. 16 to 19, pixelelectrodes 190 and 190-1 are made of an opaque conductive material, anda protrusion 240 under the pixel electrodes 190 and 190-1 is made of atransparent organic material.

FIG. 16 is a cross-sectional view of another exemplary embodiment of theliquid crystal display taken along line III-III of FIG. 2 according tothe present invention, and FIGS. 17 to 19 are cross-sectional viewsaccording to another exemplary embodiment of a process of manufacturinga thin film transistor array panel.

First, referring to FIGS. 2 and 16, a thin film transistor array panelis described.

Gate wires 121, 124, and 124-1 and a storage capacitance line 131 aredisposed on a transparent insulation substrate 110 which may includeglass, and so on.

The gate wires 121 and 124 include a gate line 121 extending in a first(horizontal) direction, and a portion of the gate line 121 protrudesupwards in a second (vertical) direction in the layout view to form gateelectrodes 124 and 124-1. As shown in FIG. 2, two gate electrodes 124and 124-1 are disposed in each pixel area.

The storage capacitance line 131 is disposed substantially in parallelto the gate line 121, and includes a portion having a relatively widewidth within a pixel area, thereby forming a storage electrode 134.

The gate wires 121, 124, and 124-1 and the storage capacitance line 131are covered with the gate insulating layer 140. Semiconductor layers 154and 154-1, which may include amorphous silicon, are disposed on the gateinsulating layer 140. The semiconductor layers 154 and 154-1 areoverlapped with the gate electrodes 124 and 124-1, and form a channel ofa thin film transistor. Ohmic contact layers 163, 165, 163-1, and 165-1,which may include amorphous silicon in which N-type impurities such asphosphorous are doped with a high concentration, are disposed on thesemiconductor layers 154 and 154-1.

Data wires 171, 173, 175, 171-1, 173-1, and 175-1 are disposed on theohmic contact layers 163, 165, 163-1, and 165-1 and the gate insulatinglayer 140. The data wires 171, 173, 175, 171-1, 173-1, and 175-1 includetwo data lines 171 and 171-1 extending substantially in the verticaldirection, source electrodes 173 and 173-1 respectively connectedthereto, and drain electrodes 175 and 175-1 separated therefrom. Thesource electrodes 173 and 173-1 protrude upwards in the verticaldirection in the layout view from the data lines 171 and 171-1 in anupper part of the gate electrodes 124 and 124-1 and have substantially a“U” shape, or a horse's hoof shape. The drain electrodes 175 and 175-1are respectively disposed opposite to the source electrodes 173 and173-1 relative to the channel of the thin film transistor, and a first(distal) end thereof is positioned within a “U” shape, or a horse's hoofshape of the source electrodes 173 and 173-1, while a second end thereofis extended and has a relatively wide width.

The ohmic contact layers 163, 165, 163-1, and 165-1 are disposed only ina region where the semiconductor layers 154 and 154-1 and the data wires171, 173, 175, 171-1, 173-1, and 175-1 overlap. The gate electrode 124,the semiconductor layer 154, the source electrode 173, and the drainelectrode 175 form one (single) first transistor, and the gate electrode124-1, the semiconductor layer 154-1, the source electrode 173-1, andthe drain electrode 175-1 symmetrically disposed thereto form one(single) second transistor.

A passivation layer 180 is disposed on the data wires 171, 173, 175,171-1, 173-1, and 175-1. A color filter 230 and a black matrix 220 areboth disposed on the passivation layer 180. A capping layer 235, whichmay include a silicone nitride film SiNx and so on, is disposed directlyon an upper surface of the color filter 230 and the black matrix 220.The capping layer 235 performs a function of protecting the black matrix220 and the color filter 230. The black matrix 220 is disposed on anuppermost surface of a transistor, the gate line 121, and the data lines171 and 171-1. The color filter 230 is disposed in a region where theblack matrix 220 is not disposed (e.g., except for the black matrix220).

Completely through the color filter 230 and the capping layer 235,openings 185, 185-1, and 187 are formed to expose an upper portion ofthe drain electrodes 175 and 175-1 and an upper portion of the storageelectrode 134. The openings 185 and 185-1 are formed to extendcompletely through the passivation layer 180, the color filter 230, andthe capping layer 235, and expose the drain electrodes 175 and 175-1. Incontrast, the opening 187 formed exposing the storage electrode 134 isformed to extend only through the color filter 230 and the capping layer235, and does not extend into the passivation layer 180.

A plurality of the protrusion 240 is disposed directly on the cappinglayer 235, such that a portion of the capping layer 235 is disposedbetween a lower surface of the protrusions 240 and the color filter 230.In the illustrated embodiment, the protrusion 240 has substantially abell-shaped section, but may have various cross-section shapes such as asemicircular shape, a semi-oval shape, a triangular shape, and atrapezoidal shape in alternative embodiments. It is preferable that aside surface of the protrusion 240 has a taper shape. In the illustratedembodiment, the protrusion 240 is formed with an organic film, and theorganic film transmits light. This is different from the embodiment ofFIGS. 2 to 15 where the protrusions 225 include the same material asthat of the black matrix 220.

A first pixel electrode 190 and a second pixel electrode 190-1 aredisposed directly on the protrusion 240. The first pixel electrode 190and the second pixel electrode 190-1 are electrically connected to thedrain electrodes 175 and 175-1 through the openings 185 and 185-1,respectively. The pixel electrodes 190 and 190-1 may include an opaqueconductive material, and include a first linear electrode 191 and asecond linear electrode 191-1 extending in an oblique direction relativeto the gate line 121 and the data lines 171 and 171-1. Further, both thefirst linear electrode 191 and the second linear electrode 191-1 in thefirst pixel electrode 190 and the second pixel electrode 190-1 aredisposed directly on and overlapping substantially all surfaces of theprotrusion 240, except for the lower surface facing the capping layer235. The illustrated embodiment is different from the embodiment ofFIGS. 2 to 15, in that the pixel electrodes in FIGS. 16-19 include anopaque conductive material.

A structure of the first pixel electrode 190 is described as follows.

The first pixel electrode 190 includes a first trunk portion disposedextended along the first data line 171, and a surface electrode 194corresponding to the storage electrode 134 and overlapped theretopositioned at an upper part of the storage electrode 134. The firstlinear electrode 191 extends in an oblique direction from the firsttrunk portion and edges of the surface electrode 194. The first linearelectrode 191 extends in a right upper direction from an upper edge ofthe surface electrode 194, and the first linear electrode 191 extends ina right lower direction from a lower edge of the surface electrode 194.In an exemplary embodiment, the first linear electrode 191 is formed inan angle of about 45° relative to the gate line 121 or the data lines171 and 171-1.

The second pixel electrode 190-1 includes an upper portion and a lowerportion, both substantially in parallel to the gate line 121 and a sideportion disposed along the second data line 171-1, which may beconsidered as a second trunk portion of an inverse

-shaped structure. The second linear electrode 191-1 extends from thesecond trunk portion of an inverse

-shaped structure. The second linear electrode 191-1 extends in a leftlower direction relative to the upper edge of the surface electrode 194,and the second linear electrode 191-1 extends in a left upper directionrelative to the lower edge of the surface electrode 194.

The plurality of the first linear electrode 191 and the plurality of thesecond linear electrode 191-1, are disposed on the protrusion 240 andare formed substantially in parallel to each other, respectively.Different voltages are applied to the first linear electrode 191 and thesecond linear electrode 191-1. In an exemplary embodiment, a commonvoltage is applied to one side thereof, and a data voltage is applied tothe other side thereof. Alternatively, a data voltage may be applied toone side thereof, and a data voltage having opposite polarity may beapplied to the other side thereof.

In the illustrated embodiment, a separate part of the liquid crystaldisplay is not disposed on a transparent substrate 210 of an upper panelfacing the thin film transistor panel. The black matrix 220, the colorfilter 230, etc., are disposed on the lower thin film transistor arraypanel.

Polarizers 12 and 22 are attached to an outermost surface of thetransparent substrate 110 of the thin film transistor display panel andan outermost surface of the transparent substrate 210 of the upperpanel, respectively. In an exemplary embodiment. absorption axes of thepolarizers 12 and 22 are disposed substantially perpendicular to eachother and/or may be disposed in an angle of about 45° relative to thefirst linear electrode 191 and the second linear electrode 191-1.

In the illustrated embodiment, an alignment layer is advantageously notdisposed at the innermost side of the thin film transistor array paneland at the innermost side of the upper panel, while a liquid crystal 3is injected therebetween is blue phase liquid crystal.

An exemplary embodiment of a method of manufacturing a thin filmtransistor array panel in the liquid crystal display shown in FIG. 16,is described in detail with reference to FIGS. 17 to 19.

In FIGS. 17 to 19, the same portions as those of the exemplaryembodiment of FIGS. 2 to 15 are omitted, and only portions differenttherefrom are shown. Formation of the thin film transistor array panelup to forming the passivation layer 180 is the same as that of anexemplary embodiment of FIGS. 2 to 15 and further description thus isomitted.

As shown in FIG. 17, a passivation layer 180 disposed covering the datawires 171, 173, 175, 171-1, 173-1, and 175-1 is formed, and a blackmatrix 220 and a color filter 230 are formed on the passivation layer180. A capping layer 235 is formed directly on and contacting portionsof the black matrix 220 and the color filter 230. The capping layer 235performs a function of protecting the black matrix 220 and the colorfilter 230. The capping layer 235, the color filter 230, and thepassivation layer 180, openings 185, 185-1, and 187, respectively, areformed such as by etching.

As shown in FIG. 18, a plurality of a protrusion 240 is formed on thecapping layer 235, unlike the illustrated embodiment of FIGS. 2-15 wherethe protrusions 225 are formed at substantially as same time as theblack matrix 220. The protrusion 240 may include an organic material andcan transmit light.

As shown in FIG. 19, the pixel electrodes 190 and 190-1 include anopaque conductive material. The first pixel electrode 190 includes afirst trunk portion, a surface electrode 194, and a first linearelectrode 191, and the second pixel electrode 190-1 includes an inverse

-shaped second trunk portion and a second linear electrode 191-1. Thefirst linear electrode 191 and the second linear electrode 191-1 areformed directly on and contacting the protrusions 240, and are formed inparallel to each other. In an exemplary embodiment, the first linearelectrode 191 and the second linear electrode 191-1 may be obliquelyformed in an angle of about 45° relative to the gate line 121 and thedata lines 171 and 171-1.

A liquid crystal display having the above described structure of FIGS.16-19 and using blue phase liquid crystal, has an electrode structure ofa protrusion form. Even if a relatively lower voltage is applied to theliquid crystal display for driving the liquid crystal display, liquidcrystals of a relatively large region may be influenced by the lowervoltage, and the liquid crystal display can be advantageously drivenusing the relatively low voltage. Further, if a voltage applied to thefirst data line 171 and a voltage applied to the second data line 171-1have an opposite phase, the liquid crystal display can be driven even ina lower voltage.

Additionally, since the first linear electrode 191 and the second linearelectrode 191-1 include an opaque conductive material and cover theprotrusion 240, leakage of light from a periphery of the protrusion 240is reduced or effectively prevented. Advantageously, picture quality isimproved.

In short, the illustrated exemplary embodiment of FIGS. 16 to 19 isdifferent from the embodiment of FIGS. 2 to 15 in that the protrusion240 is made of an organic material and a pixel electrode 190 and 190-1formed on the protrusion 240 is formed with an opaque conductor.

A liquid crystal display according to another exemplary embodiment shownin FIGS. 20 to 24 is described hereinafter.

FIGS. 20 to 24 show only cross-sectional views, and a layout viewthereof is the same as that of the illustrated embodiment of FIG. 2 andthus further description of the layout view is omitted. Unlike anexemplary embodiment of FIGS. 2 to 15, in FIGS. 20 to 24, the protrusion240 is made of a transparent organic material, and an opaque metal layer237 is formed under the protrusion 240.

FIG. 20 is a cross-sectional view of another exemplary embodiment of theliquid crystal display taken along line III-III of FIG. 2 according tothe present invention, and FIGS. 21 to 24 are cross-sectional viewsaccording to another exemplary embodiment of a process of manufacturinga thin film transistor array panel.

First, referring to FIGS. 2 and 20, a thin film transistor array panelis described.

Gate wires 121, 124, and 124-1 and a storage capacitance line 131 aredisposed on a transparent insulation substrate 110, which may includeglass, and so on.

The gate wires 121 and 124 include a gate line 121 extending in a firsthorizontal direction, and a portion of the gate line 121 protrudesupwards in a second (vertical) direction in the layout view to form gateelectrodes 124 and 124-1. As shown in FIG. 2, two gate electrodes 124and 124-1 are disposed in each pixel area.

The storage capacitance line 131 is disposed substantially in parallelto the gate line 121, and includes a portion having a relative widewidth within a pixel area, thereby forming a storage electrode 134.

The gate wires 121, 124, and 124-1 and the storage capacitance line 131are covered with a gate insulating layer 140. Semiconductor layers 154and 154-1, which may include amorphous silicon, are disposed on the gateinsulating layer 140. The semiconductor layers 154 and 154-1 areoverlapped with the gate electrodes 124 and 124-1 to form a channel of athin film transistor. Ohmic contact layers 163, 165, 163-1, and 165-1,which may include amorphous silicon in which N-type impurities such asphosphorous are doped with a high concentration, are disposed on thesemiconductor layers 154 and 154-1.

Data wires 171, 173, 175, 171-1, 173-1, and 175-1 are disposed on theohmic contact layers 163, 165, 163-1, and 165-1 and the gate insulatinglayer 140. The data wires 171, 173, 175, 171-1, 173-1, and 175-1 includetwo data lines 171 and 171-1 extending substantially in the verticaldirection, source electrodes 173 and 173-1, respectively connectedthereto, and drain electrodes 175 and 175-1 separated therefrom. Thesource electrodes 173 and 173-1 protrude upwards in the verticaldirection in the layout view from the data lines 171 and 171-1 in anupper part of the gate electrodes 124 and 124-1 and, have asubstantially “U” shape or a horse's hoof shape. The drain electrodes175 and 175-1 are respectively disposed opposite to the sourceelectrodes 173 and 173-1 relative to the channel of the thin filmtransistor, and a first (distal) end thereof is positioned within a “U”shape, or a horse's hoof shape of the source electrodes 173 and 173-1,while a second end thereof is extended and has a relatively wide width.

The ohmic contact layers 163, 165, 163-1, and 165-1 are disposed only ina region where the semiconductor layers 154 and 154-1 and the data wires171, 173, 175, 171-1, 173-1, and 175-1 overlap. The gate electrode 124,the semiconductor layer 154, the source electrode 173, and the drainelectrode 175 form one single first transistor, and the gate electrode124-1, the semiconductor layer 154-1, the source electrode 173-1, andthe drain electrode 175-1 symmetrically disposed thereto form one singlesecond transistor.

A passivation layer 180 is disposed on the data wires 171, 173, 175,171-1, 173-1, and 175-1. A color filter 230 and a black matrix 220 areboth disposed on the passivation layer 180, and a capping layer 235which may include a silicone nitride film SiNx and so on, is disposed onportions of the color filter 230 and the black matrix 220. The blackmatrix 220 is formed in an upper part of a transistor, the gate line121, and the data lines 171 and 171-1. The color filter 230 is disposedin a region where the black matrix 220 is not disposed.

Completely through the color filter 230 and the capping layer 235,openings 185, 185-1, and 187 are formed to expose an upper portion ofthe drain electrodes 175 and 175-1 and an upper portion of the storageelectrode 134. The openings 185 and 185-1 are formed to extendcompletely through the passivation layer 180, the color filter 230, andthe capping layer 235 and expose the drain electrodes 175 and 175-1. Incontrast, the opening 187 is formed to extend only through the colorfilter 230 and the capping layer 235, and does not extend into thepassivation layer 180.

An opaque metal layer 237 and a plurality of a protrusion 240 aredisposed on the capping layer 235. The opaque metal layer 237 isdisposed only in a lower part of the protrusion 240, is formed using anopaque metal, and directly contacts the capping layer 235. In theillustrated embodiment, the protrusion 240 has substantially abell-shaped section, but may have various cross-section shapes such as asemicircular shape, a semi-oval shape, a triangular shape, and atrapezoidal shape in alternative embodiments. It is preferable that aside surface of the protrusion 240 has a taper shape. In the presentexemplary embodiment, the protrusion 240 is formed with an organic film,and the organic film transmits light. The illustrated embodiment isdifferent from the embodiment of FIGS. 2 to 15 not including the opaquemetal layer 237 and the protrusion 240 is made of the same material asthat of the black matrix 220.

A first pixel electrode 190 and a second pixel electrode 190-1 aredisposed direction on the protrusion 240. The first pixel electrode 190and the second pixel electrode 190-1 are electrically connected to thedrain electrodes 175 and 175-1 through the openings 185 and 185-1. Thepixel electrodes 190 and 190-1 may include a transparent conductivematerial such as ITO or IZO, and include a first linear electrode 191and a second linear electrode 191-1 both extending in an obliquedirection relative to the gate line 121 and the data lines 171 and171-1. Further, both the first linear electrode 191 and the secondlinear electrode 191-1 in the first pixel electrode 190 and the secondpixel electrode 190-1 are disposed directly on and contacting theprotrusions 240.

A structure of the first pixel electrode 190 is described as follows.

The first pixel electrode 190 includes a first trunk portion disposedextending substantially parallel to the first data line 171, and asurface electrode 194 corresponding to the storage electrode 134 andoverlapped thereto while being positioned at an upper part of thestorage electrode 134. The first linear electrode 191 extends in anoblique direction from the first trunk portion and edges of the surfaceelectrode 194. The first linear electrode 191 extends in a right upperdirection from an upper edge of the surface electrode 194, and the firstlinear electrode 191 extends in a right lower direction from a loweredge of the surface electrode 194. In an exemplary embodiment, the firstlinear electrode 191 is disposed at an angle of about 45° relative tothe gate line 121 or the data lines 171 and 171-1.

The second pixel electrode 190-1 includes an upper portion and a lowerportion, both substantially in parallel to the gate line 121-1 and aside portion disposed substantially parallel with the second data line171, which may be considered as a second trunk portion of an inverse

-shaped structure. The second linear electrode 191-1 extends from thesecond trunk portion of an inverse

-shaped structure. The second linear electrode 191-1 extends in a leftlower direction toward an upper edge of the surface electrode 194, andthe second linear electrode 191-1 extends in a left upper directiontoward a lower edge of the surface electrode 194.

The plurality of the first linear electrode 191 and the second linearelectrode 191-1 are disposed on the protrusion 240 and are disposedsubstantially in parallel to each other, respectively. Differentvoltages are applied to the first linear electrode 191 and the secondlinear electrode 191-1, a common voltage is applied to one side thereof,and a data voltage is applied to the other side thereof. Alternatively,a data voltage may be applied to one side thereof, and a data voltagehaving opposite polarity may be applied to the other side thereof.

In the illustrated embodiment, a separate part of the liquid crystaldisplay is not disposed on a transparent substrate 210 of an upper panelfacing the thin film transistor panel. The black matrix 220, the colorfilter 230, etc., are disposed on the lower thin film transistor arraypanel.

Polarizers 12 and 22 are attached to an outermost surface of thetransparent substrate 110 of the thin film transistor display panel andto an outermost surface of the transparent substrate 210 the upperpanel, respectively. In an exemplary embodiment, absorption axes of thepolarizers 12 and 22 are disposed substantially perpendicular to eachother and/or may be disposed in an angle of about 45° relative to thefirst linear electrode 191 and the second linear electrode 191-1.

In the illustrated embodiment, an alignment layer is advantageously notdisposed at the innermost side of the thin film transistor array paneland the innermost side of the upper panel, while a liquid crystal 3 thatis injected therebetween is blue phase liquid crystal.

An exemplary embodiment of a method of manufacturing a thin filmtransistor array panel in the liquid crystal display shown in FIG. 20 isdescribed in detail with reference to FIGS. 21 to 24.

In FIGS. 21 to 24, the same portions as those of the exemplaryembodiment of FIGS. 2 to 15 are omitted and only portions differenttherefrom are shown. Formation of the thin film transistor array panelup to forming the passivation layer 180 is the same as that of anexemplary embodiment of FIGS. 2 to 15 and further description thus isomitted.

As shown in FIG. 21, a passivation layer 180 disposed covering the datawires 171, 173, 175, 171-1, 173-1, and 175-1 is formed, and a blackmatrix 220 and a color filter 230 are formed on the passivation layer180. A capping layer 235 is formed directly on the black matrix 220 andthe color filter 230. The capping layer 235, the color filter 230, andthe passivation layer 180, openings 185, 185-1, and 187, respectively,are formed such as by etching.

As shown in FIGS. 22 and 23, an opaque metal layer 237 and a pluralityof a protrusion 240 are formed on the capping layer 235. The opaquemetal layer 237 may include a metal through which light does nottransmit, and the protrusions 240 may include an organic material whichallows light to be transmitted. After metals in which light does nottransmit are stacked, the opaque metal layer 237 may be formed through aphotolithography process. Organic materials are stacked and exposure ofa rear surface of the thin film transistor panel performed. Accordingly,during the exposure, light is not radiated to an organic material of aportion that is covered by the opaque metal layer 237, and light isradiated to the remaining portion. Thereafter, by performingdevelopment, the protrusion 240 is formed. In an exemplary embodiment,it is preferable that an organic material has positive photosensitivity,but may have various characteristics according to alternativeembodiments.

As shown in FIG. 24, the pixel electrodes 190 and 190-1 include atransparent conductive material. The first pixel electrode 190 includesa first trunk portion, a surface electrode 194, and a first linearelectrode 191, and the second pixel electrode 190-1 includes an inverse

-shaped second trunk portion and a second linear electrode 191-1. Thefirst linear electrode 191 and the second linear electrode 191-1 areformed directly on and contacting the protrusion 240 and are formed inparallel to each other. In an exemplary embodiment, the first linearelectrode 191 and the second linear electrode 191-1 may be obliquelyformed in an angle of about 45° relative to the gate line 121 and thedata lines 171 and 171-1.

A liquid crystal display having the above described structure of FIGS.20-24 and using blue phase liquid crystal, has an electrode structure ofa protrusion form. Even if a relatively lower voltage is applied fordriving the liquid crystal display, liquid crystals of a relativelylarge region may be influenced by the lower voltage, and the liquidcrystal display can be advantageously driven by the low voltage.Further, if a voltage applied to the first data line 171 and a voltageapplied to the second data line 171-1 have an opposite phase, the liquidcrystal display can be driven even in a lower voltage.

Additionally, the first linear electrode 191, the second linearelectrode 191-1, and the protrusion 240 include a transparent material,however due to an opaque metal layer 237 formed in a lower part of theprotrusion 240 and covering the protrusion 240, leakage of light from aperiphery of the protrusion 240 is reduced or effectively prevented.Advantageously, picture quality is improved.

In short, the illustrated embodiment of FIGS. 20 to 24 is different fromthe embodiment of FIGS. 2 to 15, in that the protrusion 240 is insteadmade of an organic material and the opaque metal layer 237 is formedunder the protrusion 240.

FIG. 25 is a cross-sectional view of another exemplary embodiment of theliquid crystal display taken along line III-III of FIG. 2 according tothe present invention. In FIG. 25, a light leakage phenomenon may occurin a periphery of the protrusion 240 because polarization is broken dueto different refractive indexes and refractive anisotropy when lightpassing through the protrusion 240 is applied to the liquid crystallayer 3. In the illustrated embodiment, light leakage is reduced oreffectively prevented from occurring, by according a refractive index ofthe protrusion 240 made of an organic material and a refractive index ofthe blue phase liquid crystal layer 3. The blue phase liquid crystallayer 3 has a different refractive index according to an appliedvoltage, and accords a refractive index in a specific state with that ofan organic material forming the protrusion 240. A refractive index ofthe blue phase liquid crystal layer 3 when a liquid crystal displaydisplays black may accord (e.g., be substantially the same) with arefractive index of the protrusion 240.

First, referring to FIGS. 2 and 25, a thin film transistor display panelis described. Gate wires 121, 124, and 124-1 and a storage capacitanceline 131 are disposed on a transparent insulation substrate 110 whichmay include glass, and so on.

The gate wires 121 and 124 include a gate line 121 extending in a firsthorizontal direction, and a portion of the gate line 121 protrudesupwards in a second vertical direction in the layout view to form gateelectrodes 124 and 124-1. As shown in FIG. 2, two gate electrodes 124and 124-1 are disposed in each pixel area.

The storage capacitance line 131 is disposed substantially in parallelto the gate line 121 and includes a portion having a relatively widewidth within a pixel area, thereby forming a storage electrode 134.

The gate wires 121, 124, and 124-1 and the storage capacitance line 131are covered with the gate insulating layer 140. Semiconductor layers 154and 154-1, which may include amorphous silicon, are disposed on the gateinsulating layer 140. The semiconductor layers 154 and 154-1 areoverlapped with the gate electrodes 124 and 124-1 to form a channel of athin film transistor. Ohmic contact layers 163, 165, 163-1, and 165-1,which may include amorphous silicon in which N-type impurities such asphosphorous are doped with a high concentration, are disposed on thesemiconductor layers 154 and 154-1.

Data wires 171, 173, 175, 171-1, 173-1, and 175-1 are disposed on theohmic contact layers 163, 165, 163-1, and 165-1 and the gate insulatinglayer 140. The data wires 171, 173, 175, 171-1, 173-1, and 175-1 includetwo data lines 171 and 171-1 extending substantially in a verticaldirection, source electrodes 173 and 173-1, respectively connectedthereto, and drain electrodes 175 and 175-1 separated therefrom. Thesource electrodes 173 and 173-1 protrude upwards in the verticaldirection in the layout view from the data lines 171 and 171-1 in anupper part of the gate electrodes 124 and 124-1 and have substantially a“U” shape, or a horse's hoof shape. The drain electrodes 175 and 175-1are respectively disposed opposite to the source electrodes 173 and173-1 relative to the channel of the thin film transistor, and a firstend thereof is positioned within a “U” shape, or a horse's hoof shape ofthe source electrodes 173 and 173-1, while a second end opposite to thefirst end is extended and has a relatively wide width.

The ohmic contact layers 163, 165, 163-1, and 165-1 are disposed only ina region where the semiconductor layers 154 and 154-1 and the data wires171, 173, 175, 171-1, 173-1, and 175-1 overlap. The gate electrode 124,the semiconductor layer 154, the source electrode 173, and the drainelectrode 175 form one transistor, and the gate electrode 124-1, thesemiconductor layer 154-1, the source electrode 173-1, and the drainelectrode 175-1 are symmetrically formed thereto form anothertransistor.

A passivation layer 180 is disposed on the data wires 171, 173, 175,171-1, 173-1, and 175-1. A color filter 230 and a black matrix 220 areboth disposed on the passivation layer 180. A capping layer 235, whichmay include a silicone nitride film SiNx and so on, is disposed on thecolor filter 230 and the black matrix 220. The capping layer 235performs a function of protecting the black matrix 220 and the colorfilter 230. The black matrix 220 is formed in an upper part of atransistor, the gate line 121, and the data lines 171 and 171-1. Thecolor filter 230 is formed in a region where the black matrix 220 is notformed.

Completely through the color filter 230 and the capping layer 235,openings 185, 185-1, and 187 are formed to expose an upper part of thedrain electrodes 175 and 175-1 and an upper part of the storageelectrode 134. The openings 185 and 185-1 are formed to extendcompletely through the passivation layer 180, the color filter 230, andthe capping layer 235 and expose the drain electrodes 175 and 175-1. Incontrast, the opening 187 is formed only completely through the colorfilter 230 and the capping layer 235, and is not formed through thepassivation layer 180.

A plurality of a protrusion 240 is disposed directly on the cappinglayer 235. In the illustrated embodiment, the protrusion 240 has asubstantially bell-shaped section, but may have various cross-sectionshapes such as a semicircular shape, a semi-oval shape, a triangularshape, and a trapezoidal shape in alternative embodiments. It ispreferable that a side surface of the protrusion 240 has a taper shape.In the present exemplary embodiment, the protrusion 240 is formed withan organic film, and the organic film transmits light. The organic filmfor forming the protrusion 240 has the same refractive index as that ina specific state of the blue phase liquid crystal layer 3. In theillustrated embodiment, the specific state of the blue phase liquidcrystal layer 3 may be a state when a liquid crystal display displaysblack.

A first pixel electrode 190 and a second pixel electrode 190-1 aredisposed directly on the protrusion 240. The first pixel electrode 190and the second pixel electrode 190-1 are electrically connected to thedrain electrodes 175 and 175-1 through the openings 185 and 185-1,respectively. The pixel electrodes 190 and 190-1 may include atransparent conductive material such as ITO or IZO, and include a firstlinear electrode 191 and a second linear electrode 191-1 extending in anoblique direction relative to the gate line 121 and the data lines 171and 171-1. Further, both the first linear electrode 191 and the secondlinear electrode 191-1 in the first pixel electrode 190 and the secondpixel electrode 190-1 are disposed directly on and overlappingsubstantially all surfaces of the protrusions 240, except for the lowersurface of the protrusions 240 contacting the capping layer 235.

A structure of the first pixel electrode 190 is described as follows.

The first pixel electrode 190 includes a first trunk portion disposedsubstantially parallel with the first data line 171, and a surfaceelectrode 194 corresponding to the storage electrode 134 and overlappedthereto at an upper part of the storage electrode 134. The first linearelectrode 191 extends in an oblique direction from the first trunkportion and edges of the surface electrode 194. The first linearelectrode 191 extends in a right upper direction from an upper edge ofthe surface electrode 194, and the first linear electrode 191 extends ina right lower direction from a lower edge of the surface electrode 194.In an exemplary embodiment, the first linear electrode 191 is formed inan angle of about 45° relative to the gate line 121 or the data lines171 and 171-1.

The second pixel electrode 190-1 includes an upper portion and a lowerportion, both substantially in parallel to the gate line 121 and a sideportion disposed substantially in parallel with the second data line171, thereby including a second trunk portion of an inverse

-shaped structure. The second linear electrode 191-1 extends from thesecond trunk portion of an inverse

-shaped structure, and the second linear electrode 191-1 extends in aleft lower direction toward an upper edge of the surface electrode 194,and the second linear electrode 191-1 extends in a left upper directiontoward a lower edge of the surface electrode 194.

The plurality of the first linear electrode 191 and the second linearelectrode 191-1 are disposed on the protrusion 240 and are formedsubstantially in parallel to each other, respectively. Differentvoltages are applied to the first linear electrode 191 and the secondlinear electrode 191-1. In an exemplary embodiment, a common voltage isapplied to one side thereof, and a data voltage is applied to the otherside thereof. Alternatively, a data voltage may be applied to one sidethereof, and a data voltage having opposite polarity may be applied tothe other side thereof.

In the illustrated embodiment, a separate part of the liquid crystaldisplay is not formed on a transparent substrate 210 of the upper panelfacing the thin film transistor panel. The black matrix 220, the colorfilter 230, etc., are disposed on the lower thin film transistor arraypanel.

Polarizers 12 and 22 are attached to an outermost side of thetransparent substrate 110 of the thin film transistor display panel andto an outermost side of the transparent substrate 210 of the upperpanel, respectively. In an exemplary embodiment, absorption axes of thepolarizers 12 and 22 are formed substantially perpendicular to eachother and/or may be formed in an angle of about 45° relative to thefirst linear electrode 191 and the second linear electrode 191-1.

In the illustrated embodiment, an alignment layer is advantageously notdisposed at the innermost side of the thin film transistor array paneland at the innermost side of the upper panel, while a liquid crystal 3is injected therebetween is blue phase liquid crystal. A refractiveindex of a specific state of the blue phase liquid crystal 3 issubstantially the same as that of an organic material for forming theprotrusion 240. In the illustrated embodiment of FIG. 25, the specificstate of the liquid crystal display may be a state when a liquid crystaldisplay displays black.

A liquid crystal display having the above described structure andmaterials of FIG. 25 and using blue phase liquid crystal, has anelectrode structure of a protrusion form. Even if a relatively lowervoltage is applied for driving the liquid crystal display, liquidcrystals of a relatively large region may still be influenced, and theliquid crystal display can be advantageously driven in the low voltage.Further, if a voltage applied to the first data line 171 and a voltageapplied to the second data line 171-1 have an opposite phase, the liquidcrystal display can be driven even in a lower voltage.

Additionally, since a refractive index of an organic material formingthe protrusion 240 and a refractive index in a specific state of theblue phase liquid crystal layer 3 are substantially the same, when theliquid crystal display operates in the specific state, leakage of lightfrom a periphery of the protrusion 240 is reduced or effectivelyprevented. In the illustrated embodiment, the specific state may be astate when the liquid crystal display displays black, and light may beleaked in a state except for a specific state. Since a relatively smallquantity of light is leaked, picture quality is advantageously improved.

In short, the illustrated embodiment of FIG. 25 is different from theembodiment of FIGS. 2 to 15, from the embodiment of FIGS. 16 to 19, andfrom exemplary embodiment of FIGS. 20 to 24, in that the protrusion 240of FIG. 25 are made of an organic material and a reflective index of anorganic material forming the protrusion 240 is the same as that in aspecific state of blue phase liquid crystal 3.

FIGS. 26 to 41 show an exemplary embodiment of a process of forming theprotrusion 240 and the pixel electrodes 191 and 191-1, using exposure ofa rear surface.

FIGS. 26 to 31 are cross-sectional views according to an exemplaryembodiment of a process of forming the pixel electrodes 191 and 191-1 onthe protrusion 240, using the protrusion 240 including an organicmaterial as a mask.

FIGS. 32 and 33 are graphs illustrating exemplary embodiments of atransmittance to a wavelength of an organic material.

In the embodiment of FIGS. 2 to 15, because the protrusion 225 is madeof a material for blocking light, the pixel electrodes 191 and 191-1 canbe patterned through exposure of a rear surface. Referring to FIGS. 26to 31, an exemplary embodiment of a method of patterning the pixelelectrodes 191 and 191-1 using the protrusion 240 including an organicmaterial as a mask through exposure of a rear surface is describedhereinafter.

First, a transmittance to a wavelength of an organic material isdescribed using graphs of FIGS. 32 and 33.

FIG. 32 shows a transmittance to a wavelength of two organic materials.In FIG. 32, a material M is SS-015 (a product code name), which is anorganic material, and a material N is PC-411B (a product code name),which is an organic material.

As shown in FIG. 32, in a visible region, a light transmittance of anorganic material exceeds 95%, but in an ultraviolet ray region, a lighttransmittance of an organic material abruptly drops. FIG. 32 shows thatas a wavelength of ultraviolet rays is small, a transmittance islowered, and thus an organic material can be used as a mask forultraviolet rays.

Particularly, FIG. 33 shows that when a predetermined processing for anorganic material is performed, a transmittance is further lowered.

In FIG. 33, HB shows a case where an organic material is hard-baked, ITOshows a case where ITO is coated to an organic material, X shows a casewhere a surface treatment of an organic material is performed byN-methylpyrrolidone (NMP), which is a strong alkali organic solvent, Yshows a case where a surface treatment of an organic material isperformed by metyl n-butyl ketone (MBK), which is an organic solvent fora resin, and Z shows a case where a surface treatment of an organicmaterial is performed by acetone. Further, the organic material that isused in FIG. 33 is PC-411B.

As shown in FIG. 33, even in a case where only a hard baking (HB)processing of an organic material is performed, a light transmittancereduces in an ultraviolet rays region. However, in a case where asurface treatment of an organic material is performed with acetone, NMP,MBK, and so on, a transmittance drops to 40% or low, so that an organicmaterial can be used as a mask. Further, FIG. 33 shows a transmittancewhen ITO is additionally coated in an organic material, and shows that atransmittance is further lowered when ITO additionally is coated.Therefore, because a transmittance is further lowered in a structure inwhich ITO is coated on an organic material, the organic material canperform a function as a mask for ultraviolet rays. A method ofperforming a surface treatment of an organic material and stacking ITOlayers thereon may be used.

As a result, only an organic material may be used as a mask, however byperforming a surface treatment of the organic material, or byadditionally stacking an ITO layer on the organic material, the organicmaterial has a lower transmittance and thus the organic material may beused as a mask.

A method of using an organic material as a mask is described in detailwith reference to FIGS. 26 to 31. FIGS. 26 to 31 show the protrusion 240is directly formed on the substrate 110. However, another layer may beformed between the protrusion 240 and the substrate 110, as shown inFIGS. 18 and 19.

As shown in FIG. 26, the protrusion 240 including an organic material isformed on the substrate 110. In an exemplary embodiment, the protrusion240 can be formed by stacking an organic material and exposing anddeveloping an upper part thereof using a mask (not shown).

As shown in FIG. 27, an ITO layer 193 and a photoresist layer 253 aresequentially disposed on the protrusion 240 and the substrate 110. In anexemplary embodiment, the ITO layer 193 may be a transparent conductivelayer and may be made of IZO. As in the embodiment of FIG. 25, it ispreferable that a refractive index of an organic material is the same asthat of a specific state of the blue phase liquid crystal layer 3.

As shown in FIG. 28, exposure of a rear surface is performed usingultraviolet rays in a lower part of the substrate 110, as indicated bythe upward pointing arrows. As shown in FIGS. 32 and 33, because theprotrusion 240 has a lower transmittance, the protrusion 240 can beessentially used as a mask, and thus a small quantity of light isapplied to the photoresist layer 253 formed in an upper part of theprotrusion 240, so that a property thereof does not change. In anexemplary embodiment, it is preferable that the photoresist layer 253has positive characteristics. Further, the protrusion 240 may be made ofan organic material having a low transmittance of ultraviolet rays, or asurface treatment for lowering a transmittance may be performed in theprotrusion 240.

As shown in FIG. 29, the photoresist layer 253 is developed. Therefore,the photoresist layer 253 of a region exposed to light from the rear ofthe substrate 110 is removed, and the photoresist layer 253 whoseproperty does not change due to application of a small quantity of lightremains.

As shown in FIG. 30, by etching the ITO layer 193 using the remainedphotoresist layer 253 as a mask, the pixel electrodes 191 and 191-1 areformed.

As shown in FIG. 31, by removing the photoresist layer 253, a pattern ofthe pixel electrodes 191 and 191-1 is completed.

Since the pixel electrodes 191 and 191-1 do not have photosensitivity,the pixel electrodes 191 and 191-1 are patterned after additionallyforming the photoresist layer 253. However, when a material havingphotosensitivity is patterned, a pattern can be directly formed bydeveloping after exposing a rear surface without forming the photoresistlayer 253.

FIGS. 34 to 41 are cross-sectional views illustrating an exemplaryembodiment of a process sequence of FIGS. 22 to 24.

FIGS. 34 to 41 show an opaque metal layer 237 formed directly on thesubstrate 110. However, as shown in FIGS. 22 to 24, a separate layer maybe formed between the substrate 110 and the opaque metal layer 237.According to an embodiment, which is different from FIGS. 22 to 24, theopaque metal layer 237 may be formed directly on the substrate 110. Inthis embodiment, the opaque metal layer 237 and the gate lines 121 maybe formed at the same time with the same material, and a separate layermay be formed between the opaque metal layer 237 and the protrusion 240.

As shown in FIG. 34, a pattern of the opaque metal layer 237 is formedon the substrate 110. After sequentially stacking an opaque material anda photoresist 243, a photoresist pattern is formed by exposing anddeveloping in an upper part thereof using a mask, and then an opaquemetal layer 237 can be formed by etching using the photoresist patternas a mask. In an exemplary embodiment, it is preferable that thephotoresist 243 has positive characteristics.

As shown in FIG. 35, organic materials for a protrusion are stacked andare exposed from the rear surface, as indicated by the upward pointingarrows under the substrate 110. Due to the opaque metal layer 237, thephotoresist 243 formed on the opaque metal layer 237 is not exposed andonly a photoresist 243 around the opaque metal layer 237 is exposed.

A pattern of a protrusion 240 is formed by developing, as shown in FIG.36.

As shown in FIG. 37, the ITO layer 193 and the photoresist layer 253 aresequentially stacked on the protrusion 240 and the substrate 110. In anexemplary embodiment, the ITO layer 193 includes a transparentconductive layer and may be made of IZO.

As shown in FIG. 38, exposure of a rear surface is performed in a lowerpart of the substrate 110, as indicated by the upward pointing arrowsunder the substrate 110. It is preferable that the photoresist layer 253has positive characteristics.

As shown in FIG. 39, the photoresist layer 253 is developed. Therefore,the photoresist layer 253 of a region exposed by light is removed.

As shown in FIG. 40, by etching the ITO layer 193 using the remainedphotoresist layer 253 as a mask, the pixel electrodes 191 and 191-1 areformed.

As shown in FIG. 41, by removing the photoresist layer 253, a pattern ofthe pixel electrodes 191 and 191-1 is completed.

Since the pixel electrodes 191 and 191-1 do not have photosensitivity,the pixel electrodes 191 and 191-1 are patterned by additionally formingthe photoresist layer 253. However when a material havingphotosensitivity is patterned, a pattern can be directly formed bydeveloping after exposing a rear surface without forming the photoresistlayer 253.

In the foregoing description, a method of exposing a rear surface isdescribed in detail with reference to FIGS. 26 to 41. Alternatively, apattern may be formed with various methods. Further, even when usingultraviolet rays, an organic material can be used as a mask, and this isnot limited to a liquid crystal display.

FIG. 42 is a cross-sectional view of another exemplary embodiment of theliquid crystal display taken along line III-III of FIG. 2, according tothe present invention.

FIG. 42 is different from FIG. 20, since the opaque metal layer 237 andthe gate lines 121 are formed at the same time with the same material.The gate lines 121 and the opaque metal layer 237 are disposed on thesubstrate 110. By forming the opaque metal layer 237 and the gate lines121 together, a photolithography process is lessen.

According to an embodiment, a separate layer may be formed between theopaque metal layer 237 and the protrusion 240.

In short, in the present invention, by allowing a pixel electrode tohave a structure overlapping with a protrusion, transmission of light isreduced or effectively prevented through a corresponding protrusion andthe pixel electrode formed thereon, or by allowing a refractive index ofthe corresponding protrusion and a refractive index of blue phase liquidcrystal to have substantially the same value, light leaked to aperiphery of a pixel electrode is reduced or effectively prevented, andvarious exemplary embodiments may exist.

Further, in the present invention, a method of forming an upper patternby stacking using an organic material and exposing a rear surface isdescribed. That is, an organic material can be used as a mask whenultraviolet rays are used.

While this invention has been described in connection with what ispresently considered to be practical exemplary embodiments, it is to beunderstood that the invention is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

What is claimed is:
 1. A method of manufacturing a display device, themethod comprising: forming an organic film pattern by stacking andpatterning an organic material on an insulation substrate; stacking afirst layer comprising a conductive material, on the organic filmpattern and the insulation substrate; exposing the organic film patternand the first layer, from a rear surface of the insulation substratewith ultraviolet rays, using the organic film pattern as a mask; andpatterning the first layer.
 2. The method of claim 1, wherein theorganic film pattern is hard-baked, or a surface treatment of theorganic film pattern is performed.
 3. The method of claim 2, wherein thesurface treatment is performed with one of N-methylpyrrolidone (NMP),which is a strong alkali organic solvent, metyl n-butyl ketone (MBK),which is an organic solvent for a resin, and acetone.
 4. The method ofclaim 1, wherein the first layer has photosensitivity.
 5. The method ofclaim 1, wherein the first layer further comprises a photoresist on theconductive material; and the method further comprises: patterning thephotoresist by developing, after exposing the rear surface, wherein thepatterning of the first layer comprises etching the first layer usingthe patterned photoresist as a mask.